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1 IPD60R170CFD7 rev.2.1,2018-01-18 final data sheet dpak mosfet 600vcoolmosacfd7powertransistor coolmos?isarevolutionarytechnologyforhighvoltagepower mosfets,designedaccordingtothesuperjunction(sj)principleand pioneeredbyinfineontechnologies.thelatestcoolmos?cfd7isthe successortothecoolmos?cfd2seriesandisanoptimizedplatform tailoredtotargetsoftswitchingapplicationssuchasphase-shiftfull-bridge (zvs)andllc.resultingfromreducedgatecharge(q g ),best-in-class reverserecoverycharge(q rr )andimprovedturnoffbehaviorcoolmos? cfd7offershighestefficiencyinresonanttopologies.aspartofinfineons fastbodydiodeportfolio,thisnewproductseriesblendsalladvantagesof afastswitchingtechnologytogetherwithsuperiorhardcommutation robustness,withoutsacrificingeasyimplementationinthedesign-in process.thecoolmos?cfd7technologymeetshighestefficiencyand reliabilitystandardsandfurthermoresupportshighpowerdensity solutions.altogether,coolmos?cfd7makesresonantswitching topologiesmoreefficient,morereliable,lighterandcooler. features ?ultra-fastbodydiode ?lowgatecharge ?best-in-classreverserecoverycharge(q rr ) ?improvedmosfetreversediodedv/dtanddi f /dtruggedness ?lowestfomr ds(on) *q g andr ds(on) *e oss ?best-in-classr ds(on) insmdandthdpackages benefits ?excellenthardcommutationruggedness ?highestreliabilityforresonanttopologies ?highestefficiencywithoutstandingease-of-use/performancetradeoff ?enablingincreasedpowerdensitysolutions potentialapplications suiteableforsoftswitchingtopologies optimizedforphase-shiftfull-bridge(zvs),llcapplicationsCserver, telecom,evcharging productvalidation: qualifiedforindustrialapplicationsaccordingtothe relevanttestsofjedec47/20/22 pleasenote:formosfetparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. table1keyperformanceparameters parameter value unit v ds @ t j,max 650 v r ds(on),max 170 m w q g,typ 28 nc i d,pulse 51 a e oss @ 400v 3.2 j body diode di f /dt 1300 a/s type/orderingcode package marking relatedlinks IPD60R170CFD7 pg-to 252-3 60r170f7 see appendix a tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
2 600vcoolmosacfd7powertransistor IPD60R170CFD7 rev.2.1,2018-01-18 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
3 600vcoolmosacfd7powertransistor IPD60R170CFD7 rev.2.1,2018-01-18 final data sheet 1maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 14 9 a t c =25c t c =100c pulsed drain current 2) i d,pulse - - 51 a t c =25c avalanche energy, single pulse e as - - 60 mj i d =3.7a; v dd =50v; see table 10 avalanche energy, repetitive e ar - - 0.30 mj i d =3.7a; v dd =50v; see table 10 avalanche current, single pulse i as - - 3.7 a - mosfet dv/dt ruggedness dv/dt - - 120 v/ns v ds =0...400v gate source voltage (static) v gs -20 - 20 v static; gate source voltage (dynamic) v gs -30 - 30 v ac (f>1 hz) power dissipation p tot - - 76 w t c =25c storage temperature t stg -55 - 150 c - operating junction temperature t j -55 - 150 c - mounting torque - - - - ncm - continuous diode forward current i s - - 14 a t c =25c diode pulse current 2) i s,pulse - - 51 a t c =25c reverse diode dv/dt 3) dv/dt - - 70 v/ns v ds =0...400v, i sd <=14a, t j =25c see table 8 maximum diode commutation speed di f /dt - - 1300 a/ m s v ds =0...400v, i sd <=14a, t j =25c see table 8 insulation withstand voltage v iso - - n.a. v v rms , t c =25c, t =1min 1) limited by t j,max . 2) pulse width t p limited by t j,max 3) identical low side and high side switch with identical r g tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
4 600vcoolmosacfd7powertransistor IPD60R170CFD7 rev.2.1,2018-01-18 final data sheet 2thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 1.65 c/w - thermal resistance, junction - ambient r thja - - 62 c/w device on pcb, minimal footprint thermal resistance, junction - ambient for smd version r thja - 35 45 c/w device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70m thickness) copper area for drain connection and cooling. pcb is vertical without air stream cooling. soldering temperature, wave- & reflow soldering allowed t sold - - 260 c reflow msl1 tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
5 600vcoolmosacfd7powertransistor IPD60R170CFD7 rev.2.1,2018-01-18 final data sheet 3electricalcharacteristics at t j =25c,unlessotherwisespecified table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 600 - - v v gs =0v, i d =1ma gate threshold voltage v (gs)th 3.5 4 4.5 v v ds = v gs , i d =0.3ma zero gate voltage drain current 1) i dss - - - 7 1 37 m a v ds =600v, v gs =0v, t j =25c v ds =600v, v gs =0v, t j =125c gate-source leakage current i gss - - 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 0.144 0.328 0.17 - w v gs =10v, i d =6.0a, t j =25c v gs =10v, i d =6.0a, t j =150c gate resistance r g - 10.9 - w f =1mhz,opendrain table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 1199 - pf v gs =0v, v ds =400v, f =250khz output capacitance c oss - 22 - pf v gs =0v, v ds =400v, f =250khz effective output capacitance, energy related 2) c o(er) - 40 - pf v gs =0v, v ds =0...400v effective output capacitance, time related 3) c o(tr) - 402 - pf i d =constant, v gs =0v, v ds =0...400v turn-on delay time t d(on) - 31 - ns v dd =400v, v gs =10v, i d =7.0a, r g =10.2 w ;seetable9 rise time t r - 15 - ns v dd =400v, v gs =10v, i d =7.0a, r g =10.2 w ;seetable9 turn-off delay time t d(off) - 68 - ns v dd =400v, v gs =10v, i d =7.0a, r g =10.2 w ;seetable9 fall time t f - 9 - ns v dd =400v, v gs =10v, i d =7.0a, r g =10.2 w ;seetable9 table6gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 7 - nc v dd =400v, i d =7.0a, v gs =0to10v gate to drain charge q gd - 9 - nc v dd =400v, i d =7.0a, v gs =0to10v gate charge total q g - 28 - nc v dd =400v, i d =7.0a, v gs =0to10v gate plateau voltage v plateau - 5.7 - v v dd =400v, i d =7.0a, v gs =0to10v 1) maximum specification is defined by calculated six sigma upper confidence bound 2) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to400v 3) c o(tr) isafixedcapacitancethatgivesthesamechargingtimeas c oss while v ds isrisingfrom0to400v tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
6 600vcoolmosacfd7powertransistor IPD60R170CFD7 rev.2.1,2018-01-18 final data sheet table7reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 1.0 - v v gs =0v, i f =6.0a, t j =25c reverse recovery time t rr - 89 134 ns v r =400v, i f =7a,d i f /d t =100a/s; see table 8 reverse recovery charge q rr - 0.34 0.68 c v r =400v, i f =7a,d i f /d t =100a/s; see table 8 peak reverse recovery current i rrm - 6.8 - a v r =400v, i f =7a,d i f /d t =100a/s; see table 8 tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
7 600vcoolmosacfd7powertransistor IPD60R170CFD7 rev.2.1,2018-01-18 final data sheet 4electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 25 50 75 100 125 150 0 20 40 60 80 p tot =f( t c ) diagram2:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram3:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 100 s 10 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 -2 10 -1 10 0 10 1 0.5 0.2 0.01 0.02 0.1 0.05 single pulse z thjc =f( t p );parameter: d=t p / t tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
8 600vcoolmosacfd7powertransistor IPD60R170CFD7 rev.2.1,2018-01-18 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 20 40 60 80 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 10 20 30 40 50 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs diagram7:typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 10 20 30 40 50 0.260 0.300 0.340 0.380 0.420 0.460 10 v 7 v 6.5 v 20 v 6 v 5.5 v r ds(on) =f( i d ); t j =125c;parameter: v gs diagram8:drain-sourceon-stateresistance t j [c] r ds(on) [normalized] -50 -25 0 25 50 75 100 125 150 0.5 1.0 1.5 2.0 2.5 r ds(on) =f( t j ); i d =6.0a; v gs =10v tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
9 600vcoolmosacfd7powertransistor IPD60R170CFD7 rev.2.1,2018-01-18 final data sheet diagram9:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 12 0 20 40 60 80 150 c 25 c i d =f( v gs ); v ds =20v;parameter: t j diagram10:typ.gatecharge q gate [nc] v gs [v] 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 400 v 120 v v gs =f( q gate ); i d =7.0apulsed;parameter: v dd diagram11:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 -1 10 0 10 1 10 2 125 c 25 c i f =f( v sd );parameter: t j diagram12:avalancheenergy t j [c] e as [mj] 25 50 75 100 125 150 0 20 40 60 80 e as =f( t j ); i d =3.7a; v dd =50v tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
10 600vcoolmosacfd7powertransistor IPD60R170CFD7 rev.2.1,2018-01-18 final data sheet diagram13:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -50 -25 0 25 50 75 100 125 150 540 570 600 630 660 690 v br(dss) =f( t j ); i d =1ma diagram14:typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 600 10 -1 10 0 10 1 10 2 10 3 10 4 10 5 ciss coss crss c =f( v ds ); v gs =0v; f =250khz diagram15:typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 600 0 1 2 3 4 5 6 7 e oss = f (v ds ) tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
11 600vcoolmosacfd7powertransistor IPD60R170CFD7 rev.2.1,2018-01-18 final data sheet 5testcircuits table8diodecharacteristics table9switchingtimes table10unclampedinductiveload tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
12 600vcoolmosacfd7powertransistor IPD60R170CFD7 rev.2.1,2018-01-18 final data sheet 6packageoutlines figure1outlinepg-to252-3,dimensionsinmm/inches tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
13 600vcoolmosacfd7powertransistor IPD60R170CFD7 rev.2.1,2018-01-18 final data sheet 7appendixa table11relatedlinks ? ifxcoolmoscfd7webpage: www.infineon.com ? ifxcoolmoscfd7applicationnote: www.infineon.com ? ifxcoolmoscfd7simulationmodel: www.infineon.com ? ifxdesigntools: www.infineon.com tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
14 600vcoolmosacfd7powertransistor IPD60R170CFD7 rev.2.1,2018-01-18 final data sheet revisionhistory IPD60R170CFD7 revision:2018-01-18,rev.2.1 previous revision revision date subjects (major changes since last revision) 2.0 2017-08-25 release of final version 2.1 2018-01-18 raised diode current for dv/dt and dif/dt (table 2) to value of continuous drain current; changed internal rg (table 4); renamed related links (table 11) trademarksofinfineontechnologiesag aurix?,c166?,canpak?,cipos?,coolgan?,coolmos?,coolset?,coolsic?,corecontrol?,crossave?,dave?,di-pol?,drblade?, easypim?,econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,hitfet?,hybridpack?,infineon?, isoface?,isopack?,i-wafer?,mipaq?,modstack?,my-d?,novalithic?,omnitune?,optiga?,optimos?,origa?,powercode?, primarion?,primepack?,primestack?,profet?,pro-sil?,rasic?,real3?,reversave?,satric?,sieget?,sipmos?,smartlewis?, solidflash?,spoc?,tempfet?,thinq?,trenchstop?,tricore?. trademarksupdatedaugust2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2018infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (beschaffenheitsgarantie). withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. inaddition,anyinformationgiveninthisdocumentissubjecttocustomerscompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomersproductsandanyuseofthe productofinfineontechnologiesincustomersapplications. thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.itistheresponsibilityofcustomers technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d

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